Method of fabricating an oxygen-stable layer/diffusion barrier/poly bottom electrode structure for high-K DRAMS using disposable-oxide processing

摘要

A capacitor structure and method. The capacitor (12) comprises a HDC dielectric (40) and upper (44) and lower electrodes. The lower electrode comprises a capacitor via (19), diffusion barrier (34) and an oxygen stable material (36). The diffusion barrier (34) is formed over the capacitor via (19) and bitline via (17). The bitline structure (20) is then formed. Next, a multi-level dielectric (80,84) is formed and storage node areas (70)are etched through the multi-level dielectric leaving dielectric sidewalls (66) on the bitline structure (20). The oxygen stable material (36) is then formed in the storage node area (70). Portions of the multi-level dielectric layer (84) over the bitline structure (20) are removed. The HDC dielectric (40) is then formed adjacent the oxygen stable material (36).