| 摘要 |
A GaAs single crystal substrate and an epitaxial wafer using the same suppress the generation of slips during growth of the epitaxial layer, and improve the breakdown withstanding characteristic of devices fabricated on such substrates. The GaAs single crystal substrate has a mean dislocation density in plane of at most 2x104 cm-2, a carbon concentration of 2.5 to 20.0x1015 cm-3, a boron concentration of 2.0 to 20.0x1016 cm-3, an impurity concentration other than carbon and boron of at most 1x1017 cm-3, an EL2 concentration of 5.0 to 10.0x1015 cm-3, resistivity of 1.0 to 5.0x108 OMEGA.cm and a mean residual strain measured by photoelastic analysis of at most 1.0x10-5.
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