发明名称 EXPOSURE MASK, EXPOSURE METHOD, AND MANUFACTURE OF EXPOSURE MASK
摘要 <p>PROBLEM TO BE SOLVED: To provide an exposure mask for pattern exposure/transfer in lump at a high resolution, regardless of the pattern size on the mask. SOLUTION: A transmissive film pattern 4 is formed on a film, which has transmission for exposure light, and a plurality of absorbing body materials 5 and 6 are embedded in the pattern recessed part. Unwanted parts are removed through chemical and mechanical polishing process or etching process for planarization, thus providing a mask as an exposure mask which is used as various lithography masks. With the exposure mask, pattern exposure/transfer at a high resolution is allowed, regardless of the pattern size.</p>
申请公布号 JP2001028330(A) 申请公布日期 2001.01.30
申请号 JP19990201487 申请日期 1999.07.15
申请人 TOSHIBA CORP 发明人 EZAKI ZUISEN
分类号 H01L21/027;G03F1/22;(IPC1-7):H01L21/027;G03F1/16 主分类号 H01L21/027
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