| 摘要 |
PROBLEM TO BE SOLVED: To form a wiring or an electrode with ohmic connection to a substrate, simultaneously with the formation of a low resistance upper layer wiring on a gate electrode. SOLUTION: In this manufacturing method, a first resist pattern 7 having an aperture 7a for exposing source/drain regions 5, 6 to expose the upper surface of a gate electrode 2 is formed and a second resist pattern 8 having the second apertures 8d, 8e, 8c for defining source/drain electrodes 10, 11 and upper layer wiring 9 is laminated on a first resist pattern. Next, the upper wiring 9 and source/drain electrodes 10, 11 are formed simultaneously with lift-off, using the first and second resist patterns 7, 8 as the masks.
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