| 摘要 |
PROBLEM TO BE SOLVED: To improve workability of a cobalt silicide process. SOLUTION: Related to a manufacturing process for a semiconductor device of a cobalt silicide process structure on a cobalt film 37 formed over a silicide formation region, an oxidation suppressing film (cobalt nitride film 38) comprising the same component as the cobalt film 37 is laminated, and then via the cobalt nitride film 38, a process is included in which the cobalt film 37 is thermally processed for siliciding.
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