SEMICONDUCTOR AND MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: To provide a method by which the crystallizing time of amorphous silicon is reduced by lowering the crystallizing temperature of the amorphous silicon and another method by which a thin film transistor is manufactured by using the method. CONSTITUTION: After depositing a base insulating film (e.g. silicon oxide film 22), the insulating film is subjected to plasma treatment by exposing the film to a plasma atmosphere, and then, an amorphous silicon film 25 is deposited and the amorphous silicon is crystallized at 400-600°C. In addition, a part 26 having excellent crystallinity is arbitrary formed by selectively exposing the film 25 to the plasma atmosphere so as to control the part where a crystal core is produced. The semiconductor thus manufactured is used for a thin film transistor.