| 摘要 |
PROBLEM TO BE SOLVED: To grow a cladding layer consisting of a nitride semiconductor containing Al with an improved film quality by growing a second n-type layer that has a film thickness equal to a specific value or more, and a specific value or less on a first n-type layer, and by growing a third n-type layer on the first n-type layer. SOLUTION: In the growth method of an n-type nitride semiconductor, on a first n-type layer 3 consisting of n-type AlGaN or n-type Ga, a second n-type layer 4 that consists of n-type InGaN and has a film thickness being equal to 100 Å or more and 0.5 um or less is grown. Then, a third n-type layer 5 consisting of the n-type AlGaN is formed on the second n-type layer 4, thus obtaining a superior cystallinity in the n-type layer 3 when the layer 3 is set to ternary or binary mixed crystal. Also, the first n-type layer 3 is preferably grown on a substrate 1. Furthermore, a buffer layer 2 consisting of GaN may be grown on the substrate 1. Especially, when AlGaN is grown on the first n-type layer 3, the buffer layer is grown, thus improving the crystallinity. |
