发明名称 |
Semiconductor storage device |
摘要 |
The semiconductor storage device of this invention includes memory cells each having two transistors and one storage capacitor. Each memory cell is connected with a first word line and a first bit line for a first port and a second word line and a second bit line for a second port. The first and second bit lines are alternately disposed in an open bit line configuration. In the operation of the semiconductor storage device, in a period when a first precharge signal for precharging each first bit line or a first sense amplifier activating signal for activating a first sense amplifier is kept in an active state, a second precharge signal for precharging each second bit line and a second sense amplifier activating signal for activating a second sense amplifier are both placed in an inactive state.
|
申请公布号 |
US6181620(B1) |
申请公布日期 |
2001.01.30 |
申请号 |
US20000484023 |
申请日期 |
2000.01.18 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
AGATA MASASHI;TAKAHASHI KAZUNARI;FUJITA TSUTOMU;KURODA NAOKI;YAMADA TOSHIO |
分类号 |
G11C11/405;G11C7/10;G11C7/12;G11C7/22;G11C11/401;G11C11/409;G11C11/4091;G11C11/4094;(IPC1-7):G11C11/24 |
主分类号 |
G11C11/405 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|