| 摘要 |
PROBLEM TO BE SOLVED: To make the memory cells fine in a semiconductor memory, reduce the chip size of the memory, and so on, by using transistors other than those used as select transistors. SOLUTION: A semiconductor memory is constituted in such a way that a twin well composed of an n-type well area 22 and a p-type well area 23 is formed in a p-type silicon substrate 21. Memory cells are formed in the well area 23, and a buffer layer 25 is formed on the well area 23 and an element separating layer 24. In addition, a ferroelectric film 26 is formed on the buffer layer 25. Namely, the buffer layer 25 is arranged between the p-type well area 23 and ferroelectric film 26 so as to prevent the mutual diffusion of atoms between the area 23 and film 26. Therefore, the memory cells can be made find and the chip size of the semiconductor memory can be reduced.
|
