NON-VOLATILE SEMICONDUCTOR MEMORY

摘要

PROBLEM TO BE SOLVED: To increase the number of memory cells per cell string without affecting the path voltage stress by connecting a first string segment to a corresponding bit line, connecting the first string segment to a second string segment, and connecting the second string segment to a common source line by first, second, and third selecting signal respectively. SOLUTION: A memory block BLK includes plural strings corresponding to bit lines BL0-BLj. Each string includes a string selecting transistor SST, an intermediation transistor ILT, and ground selecting transistor GST. The string selecting transistor SST, memory cells MTo-MT15, and the intermediation transistor ILT constitute a first string segment, and the intermediation transistor ILT, memory cell MB0-MB15, and the ground selecting transistor GST constitute a second string segment.