| 摘要 |
PROBLEM TO BE SOLVED: To improve flatness of a wide trench area by forming a trench area through the simultaneous etching of a semiconductor substrate and a sacrifice substance film pattern and filling the trench area with an element isolating film. SOLUTION: A sacrifice substance film pattern 9b is formed within a second aperture by flattening the sacrifice substance film with a chemical mechanical polishing process till the upper surface of a mask pattern 6 and the upper surface of the first and second spaces 7a, 7b are exposed. Next, the first and second spacers 7a, 7b are selectively removed to expose the lower semiconductor substrate 1. The exposed semiconductor substrate 1 and sacrifice substance film pattern 9b are etched to form the trench area to the first and second apertures, and fill the trench area with the element isolating film. As a result, flatness of the wide trench area can be improved.
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