| 摘要 |
PURPOSE: To sufficiently form precise patterns by an ablation by a method wherein lights irradiated on a wafer surface collide with electrons in electron beams and photons of lights of a longer wavelength, and electronic energy is caused by inverse Compton scattering lights given to the above photons. CONSTITUTION: In semiconductor manufacturing apparatus, a material of an exposure part is removed by utilizing a gassing reaction (ablation) of a material by optical irradiation to form patterns on a processing face. Here, as a light source, electron beams collide with laser beams, and shortwave long lights generated due to inverse Compton scattering effects are used. From the light sources of the shortwave long lights, lights are incident on reflecting means composed of at least a pair of concave mirrors, and electron beams 4 are incident on, preferably, laser beams 3 which are focused and reciprocally reflected by the reflecting means. The electron beams 4 are incident thereon, whereby lights 3 collide with the electron beams 4 at high density in a scattering region 5, thereby obtaining scattering lights 6 (for example, X rays).
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