| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor memory in which an access time can be shortened without dividing bit lines. SOLUTION: In the semiconductor memory, at the time of supplying a power source, a pre-charge potential is supplied to all bit lines BL0-BL7, virtual GND lines VG0-VG7 by VREF potential supply circuits 2, 4. At the time of read-out operation, the pre-charge potential is supplied to the bit lines BL0-BL7, virtual GND lines VG0-VG7 of a memory block selected immediately by the VREF potential supply circuits 2, 4 after finish of a period in which the bit lines BL0-BL7 of the selected memory block are sensed by a memory cell. Thereby, the pre-charge potentials of all bit lines BL0-BL7, virtual GND line VG0-VG7 are kept before the read operation.</p> |
