| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method in which the resistance of a lower electrode for a capacitance element is lowered while excellent heat-insulating properties are ensured regarding the lower electrode, the manufacturing process of the capacitance element and the manufacturing processes of other semiconductor elements are shared and the increase of the manufacturing cost is avoided. SOLUTION: The semiconductor device has a capacitance element composed of an upper electrode 33, a dielectric film 32 and a lower electrode 31, and a semiconductor element, and plugs 9 comprising a high melting-point metallic material are formed in connecting holes formed to inter-layer insulating films on the semiconductor element in the semiconductor device. At least, a part of the lower electrode for the capacitance element is formed of the same high- melting point metallic material as the plugs 9.
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