| 摘要 |
PROBLEM TO BE SOLVED: To obtain a method of manufacturing a semiconductor device, which is free of the possibility of causing defects, such as short circuits between interconnections. SOLUTION: After a barrier metal layer 14, corresponding to an interconnection pattern, is formed on a surface protective film 12, a sidewall film 16 is formed on the surface of the layer 14. Then, the film 16 is etched back to form sidewalls 16A surrounding the layer 14. Successively, a semiconductor substrate 11 is dipped into a solution prepared by dissolving palladium into an acid, whereby a palladium layer 17 is formed on the surface to which the layer 14 is exposed. Furthermore, electroless Cu plating is performed, using a plating solution containing a growth suppressor for suppressing growth of copper, whereby copper is selectively precipitated on the layer 14 on which the layer 17 is formed, thereby forming a copper interconnection 13 in a manner of swelling on the layer 14.
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