| 摘要 |
PROBLEM TO BE SOLVED: To obtain the manufacturing method of a semiconductor device, which can prevent defectives, such as voids and stringers from being generated, without causing increase in the cost for the processes. SOLUTION: Sidewalls 17A are respectively formed on the peripheries of barrier metal patterns 15A and 15B, and thereafter palladium layers 18 are respectively formed on the exposed parts of the patterns 15A and 15B. After that, electroless plating using a copper ions-containing plating solution is applied to the patterns 15A and 15B. A growth retardant for suppressing the growth of a copper film on the edge parts of the patterns 15A and 15B is added to the plating solution and copper wirings 13A and 13B with the almost trapezoid- shaped sections are respectively formed on the patterns 15A and 15B. After that, the material for a second interlayer insulating film 14 is deposited on a first interlayer insulating film 12 by a CVD method, for example, where the film 14 which has no overhung-shaped part can be obtained.
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