发明名称 SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a FIFO memory device which can read data of the same address plural times. SOLUTION: In a FIFO memory device 1, a write pointer 4 writes successively first to Mth line data in a memory circuit 2. First, a read pointer 7 is activated and first read of the first line data is performed, next, a read pointer 8 is activated, second read of the first line data is performed. Thus, read pointers 7, 8 are activated alternately, and read out the first no Mth line data two times respectively.
申请公布号 JP2001023369(A) 申请公布日期 2001.01.26
申请号 JP19990192872 申请日期 1999.07.07
申请人 MITSUBISHI ELECTRIC CORP 发明人 KURANAGA HIROSHI
分类号 G11C7/00;(IPC1-7):G11C7/00 主分类号 G11C7/00
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