| 摘要 |
PROBLEM TO BE SOLVED: To regrow a semiconductor thin film while controlling variation of carrier concentration in an underlying p-layer semiconductor thin film by supplying the organic metal compound gas of a p-type dopant metal from a layer, exposed during a process for raising the substrate temperature up to a regrowth starting level, onto the substrate. SOLUTION: Using a group III metal and a V hydride as a material, hydrogen selenide as an n-type dopant material and diethyl zinc as a p-type dopant material, a buffer layer 11, a clad layer 12, an active layer 13, a carrier barrier layer 14 and a guide layer 15 are grown consecutively on a GaAs substrate 10 of face orientation (100) by low pressure MOCVD. Subsequently, an etching stop layer 16 and a current block layer 17 are grown consecutively by MOCVD. In this regard, substrate temperature is raised up to 750 deg.C while supplying diethyl zinc onto the substrate thus suppressing lowering of carrier concentration in the underlyig guide layer 15. |
