发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device, together with its manufacturing method, which shows sufficient noise reduction effect. SOLUTION: A specified wiring pattern is formed on one main surface of a substrate 2. In short, a plurality of land parts 3 are formed. On the substrate 2, a resist layer 4 comprising solder resist is formed between the land parts 3. An adhesive layer 8 is formed on the resist layer 4 of a chip mounting part, and a bare IC6 which is a semiconductor element is mounted on the adhesive layer 8. With an electrode 7 formed on the upper surface of the bore IC6, the electrode 7 and the land part 3 formed on the substrate 2 are electrically connected together with a wire 9 of a connecting member. A ferrite paste layer 10 comprising at least CuO is formed on one main surface of the substrate 2. On the other main surface of the substrate 2, a connection land 5 and the resist layer 4 are formed.
申请公布号 JP2001024108(A) 申请公布日期 2001.01.26
申请号 JP19990192068 申请日期 1999.07.06
申请人 SONY CORP 发明人 ISHII MASAMI
分类号 H01L23/29;H01L23/31;(IPC1-7):H01L23/29 主分类号 H01L23/29
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