| 摘要 |
PROBLEM TO BE SOLVED: To uniformly polish the surface containing a copper-based wiring layer, a barrier layer and an insulated layer, by using a slurry in which the polishing speed ratio between the copper-based wiring layer and the barrier layer, between the copper-based wiring layer and the insulated layer, and between the insulated layer and the copper-based wiring layer are specified, and by stopping each step according to a change in torque resistance every time each layer appears on the polished surface. SOLUTION: Polishing is conducted by using a chemical mechanical polishing slurry in which the polishing speed ratio (A) between the copper-based wiring layer 1 and the barrier layer 2 is 10.0 or more, and the polishing is stopped according to a change in torque resistance at the time of appearance of the barrier layer 2 on the polished surface. Subsequently, polishing is conducted by using a slurry in which above-mentioned rate is 1.5>=A>=0.8 and the polishing speed ratio between the wiring layer 1 and the insulated layer 3 is 2.0 or more, and the polishing is stopped according to a change in torque resistance at the time of appearance of the insulated layer 3 on the polished surface. Subsequently, polishing is conducted by using the slurry in which polishing speed ratio between the insulated layer 3 and the wiring layer 1 is 5.0 or more, and the polishing is stopped according to a change in torque resistance at the time of appdarances of insulated layer 3 and the wiring layer 1 on the same plane.
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