| 摘要 |
PURPOSE: A vapor phase growth apparatus is provided to grow a group III-V nitride semiconductor of a high yield in fast speed. CONSTITUTION: A vapor phase growth apparatus(1) for growing a group III-V nitride semiconductor(GaN) comprises a reaction ampoule(3) having a container(11) disposed therein for containing a group III element and an inlet(7) for introducing nitrogen, excitation means(15) for plasma-exciting nitrogen introduced from the inlet(7), and heating means(13) for heating a seed crystal(10) disposed within the reaction ampoule(3) and the container(11), wherein, upon growing the group III-V nitride semiconductor on the seed crystal(10), nitrogen is introduced from the inlet(7), and no gas is let out from within the reaction ampoule(3). |
