| 摘要 |
PURPOSE: An integrated resistance contact is provided to eliminate the need for incorporating an added resistance layer by changing a desired silicon base material in contact to a material with desired high resistivity. CONSTITUTION: In a semiconductor device or an integrated circuit having a high resistance contact(10) and a low resistance contact(11), mobility spoiling species such as carbon or oxygen are implanted into all contacts. The high resistance contact(10) is coated with barrier metal(45), and silicide(35) is protected from chemical interaction with an interconnect metal(40) in the low resistance contact(11). The barrier metal(45) is usually masked by the interconnect metal(40) when etching. Although mobility spoiling implant is consumed by the silicide(35) at the low resistance contact(11) on the left, it remains undisturbed in the high resistance contact(10) on the right. Therefore, the low resistance contact(11) can be differentiated from the high resistance contact(10) without requiring deposition of an added resistive layer, and without using an added circuit surface area in less processes than those associated with high temperature annealing.
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