| 摘要 |
PROBLEM TO BE SOLVED: To manufacture an element which develops giant magneto-resistance element effect based upon tunnel effect as a principle by precisely controlling the size of clusters, and the distances between clusters and between cluster electrodes. SOLUTION: On the top surface of an insulating substrate 2 made of a B component of a nonmagnetic body, a disk body which is formed of an A component showing super paramagnetic characteristics when made fine and also has a diameter G and a thickness T or a cluster in a spherical shape having a diameter G is formed by using a molecular beam epitaxy(MBE) method and lithography. At this time, the distances between clusters (S1, S4, and S5) and between cluster electrodes (S2 and S3) are precisely controlled. To stabilize the clusters, a C component as a nonmagnetic insulator is deposited thinly by the MBE method to form a film 3. Lastly, a cluster whose interval is precisely controlled is formed between the electrodes 1 and 2 (10 and 11) to manufacture the giant magneto-resistance(GMR) element which develops tunnel effect with a small magnetic field and greatly decreases in electric resistance.
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