| 摘要 |
PROBLEM TO BE SOLVED: To obtain good high frequency characteristic regardless of change of an interval between substrates with good reproducibility, by providing a ground surface supported by a conductive pillar independently of an opposing surface of a circuit substrate above a surface of a high frequency semiconductor integrated circuit substrate. SOLUTION: In a high frequency semiconductor integrated circuit device, a ground surface 3 which is supported by a first conductive pillar 2 of conductive pillars and is positioned at a level which is different from an opposing surface of a circuit substrate opposing to the high frequency semiconductor substrate 1 is provided above a surface of the high frequency semiconductor integrated circuit substrate 1. The high frequency semiconductor integrated circuit substrate 1 and the circuit substrate 4 are bonded by using remaining second conductive pillars 5 of conductive pillars. As a result, an interval between a surface of a high frequency semiconductor integrated circuit substrate and a ground surface can be controlled precisely and good high frequency characteristic can be obtained with good reproducibility, even if an interval between a high frequency semiconductor integrated circuit substrate and a ceramic substrate varies due to compression-bonding.
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