| 摘要 |
PROBLEM TO BE SOLVED: To obtain a manufacturing method of a bipolar transistor which forms a self-aligned type base-emitter junction. SOLUTION: On a p-type substrate, an n-type region 2 and an n-type region 3, the active region of which is determined by an insulator 4. The regions are covered with an insulation layer 5 and a mask, and the insulation layer 5 is etched to make an opening, then heavily-doped n-type impurity is implanted to the bottom of the region 3 to form a collector bottom 7. On the exposed layer 3, a p-type silicon base layer 10 and spacers 8-1 and 8-2 are deposited. An oxidized silicon insulating layer is deposited, and a spacer 11 is formed through anisotropic etching, while an n-type polysilicon emitter layer 12 is formed, then upper top face and that of the spacer 11 are planarized. A base electrode 16-1 and an emitter electrode 16-2 are formed through silicified contact surfaces 13 and 14.
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