| 摘要 |
PURPOSE: A method for depositing and etching a dielectric layer is provided to control a dielectric constant with low and etching speed changes 3:1 for forming horizontal mutual interconnects. CONSTITUTION: Quantity of carbon or hydrogen in a dielectric layer fluctuates due to the change in deposition condition for installing an etching stop layer or a low k dielectric in the application of damascene, which can be substituted for the former dielectric layer. Dual-damascene structure having a dielectric layer whose dielectric constant is not less than 2, which is lower than about 4, can execute deposition in the single reactor and is etched by vertical or horizontal interconnection, controlling the concentration of gas such as carbon monoxide fluctuate. Etching gas for forming the vertical mutual interconnections comprises CO and a fluorocarbon, and CO gas is preferably removed from etching gas for forming the horizontal interconnects.
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