发明名称 MANUFACTURE OF VARISTOR
摘要 <p>PROBLEM TO BE SOLVED: To improve solderability by suppressing adhesion of silicon compound on electrodes on the outer surface of a varistor by blending the varistor device mainly containing zinc oxide and having electrodes on its outer surface and silicon powder and by heat-treating the blend in a gas flow. SOLUTION: A varistor device 2 and SiO2 powder as Si powder are put into a cylindrical alumina porcelain container 1 having gas ventilating openings, are blended and are heat-treated at 900 deg.C for 2 hours. After forming specimens by a gas flow, the varistor device 2 and the Si powder 3 are separated and the varistor device 2 is barrel polished by using SiC and Zr balls. After that, the varistor device 2 is coated with electrolytic Ni plating and electrolytic solder plating in sequence. When the gas flow is performed during the heat treatment operation at a flow speed of 5 mm/min. or higher, forming of Bi atmosphere is suppressed, grain boundary of the varistor is prevented from being reduced and solderability failures can be reduced.</p>
申请公布号 JP2001023805(A) 申请公布日期 2001.01.26
申请号 JP19990195610 申请日期 1999.07.09
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 ONOMI TADASHI;NIWA HIROSHI;TOKUNAGA HIDEAKI;SASAKI YASUHIKO;KATO ATSUSHI
分类号 H01C7/10;F27D7/06;(IPC1-7):H01C7/10 主分类号 H01C7/10
代理机构 代理人
主权项
地址