发明名称 WIRE BONDING CONNECTING STRUCTURE
摘要 <p>PROBLEM TO BE SOLVED: To reduce the cost of a mounting substrate by providing a terminal to an insulation substrate and then bonding a wire to the wire bonding surface formed of platinum of such terminal. SOLUTION: A 5-inch silicon wafer is used as an insulation substrate 1, a titanium film 2 is deposited thereon with a vacuum deposition method and a platinum film 3 is then deposite thereon. Next, a photo-resist is formed to the whole part of the platinum surface 3 and the predetermined pattern is then formed with the photolithography. The solder 4 is formed by the lift-off method to an electronic part mounting area of an electrode pattern obtained as explained above and then electronic parts are mounted. A gold wire 8 is connected with ultrasonic connection method to the wire bonding terminal 5 which becomes the wire bonding connections of the electrode pattern.</p>
申请公布号 JP2001024028(A) 申请公布日期 2001.01.26
申请号 JP19990192452 申请日期 1999.07.07
申请人 HITACHI CHEM CO LTD 发明人 YAMAGUCHI MASATOSHI;YAMANOI KIYOSHI;MIYADERA NOBUO
分类号 H01L21/60;(IPC1-7):H01L21/60 主分类号 H01L21/60
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