发明名称 |
WIRE BONDING CONNECTING STRUCTURE |
摘要 |
<p>PROBLEM TO BE SOLVED: To reduce the cost of a mounting substrate by providing a terminal to an insulation substrate and then bonding a wire to the wire bonding surface formed of platinum of such terminal. SOLUTION: A 5-inch silicon wafer is used as an insulation substrate 1, a titanium film 2 is deposited thereon with a vacuum deposition method and a platinum film 3 is then deposite thereon. Next, a photo-resist is formed to the whole part of the platinum surface 3 and the predetermined pattern is then formed with the photolithography. The solder 4 is formed by the lift-off method to an electronic part mounting area of an electrode pattern obtained as explained above and then electronic parts are mounted. A gold wire 8 is connected with ultrasonic connection method to the wire bonding terminal 5 which becomes the wire bonding connections of the electrode pattern.</p> |
申请公布号 |
JP2001024028(A) |
申请公布日期 |
2001.01.26 |
申请号 |
JP19990192452 |
申请日期 |
1999.07.07 |
申请人 |
HITACHI CHEM CO LTD |
发明人 |
YAMAGUCHI MASATOSHI;YAMANOI KIYOSHI;MIYADERA NOBUO |
分类号 |
H01L21/60;(IPC1-7):H01L21/60 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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