发明名称 MASK, ALIGNER AND ELECTRON BEAM DIMENSION DRIFT CORRECTING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To obtain a mask, an aligner, and an electron beam dimensional drift correction method, where a variable forming electron beam drawing system can be corrected on the dimensional drift of a forming beam without lowering the aligner in throughput. SOLUTION: An aligner is equipped with an electron beam dimensional drift correction opening 3B, provided over a second opening A and an electron detector 5 installed under the electron beam dimensional drift correction opening 3B, the volume of an electron beam passing through the electron beam dimensional drift correction opening 3B, while a pattern drawn is detected on real time basis, an upper deflector 4A is given a feedback related to an amount of deflection corresponding to the change in the quantity of electricity detected by the electron detector 5, with which a forming beam can be corrected on a dimensional drift real time in an exposure process.</p>
申请公布号 JP2001023878(A) 申请公布日期 2001.01.26
申请号 JP19990191864 申请日期 1999.07.06
申请人 SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC 发明人 MATSUOKA KOJI
分类号 H01J37/09;G03F1/20;G03F7/20;H01J37/147;H01L21/027;(IPC1-7):H01L21/027;G03F1/16 主分类号 H01J37/09
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