| 摘要 |
PURPOSE: To provide a thin-film transistor array, which can prevent the occurrence of failures including point defects resulting from defective patterning caused by amorphous silicon residues or line defects resulting from defective patterning caused by metallic residues, and a method for manufacturing the array. CONSTITUTION: A thin-film transistor array has a delta array type transistor structure, in which gate layers 2 and wiring of a drain pattern 8 or storage pattern are arranged closely, in parallel with each other and contact slits 6 formed in the portions between the gate layers 2 and the wiring of the drain pattern 8 or storage pattern closely laid in parallel with the layers 2 in the transistor structure. By using the contact slits 6, silicon residues and metallic residues, which are left on the gate layers 2 or in the wiring of the drain pattern 8 and between the wiring of the storage pattern and drain pattern, are etched off. |
