| 摘要 |
PURPOSE: A method for providing double work function doping is provided to apply P+ or N+ doping to a gate conductor and, at the same time, to form a self-aligned cap in the gate conductor in order to satisfy double work function condition. CONSTITUTION: A method for providing double work function doping includes steps for forming a semiconductor substrate, a gate insulator, conductors on the gate insulator, an insulation cap on the conductors, and an insulation spacer on part of the sidewall of the conductors and of the insulation cap. This method also includes a step for doping a part of the semiconductor substrate and of the conductors with a first conductive dopant and the other part with a second conductive dopant. The conductors are annealed, to allow the first and the second conductive dopants to spread crossing into each conductor. |
