| 发明名称 |
METHOD FOR FORMING SILICIDE WITHIN SEMICONDUCTOR DEVICE AND PROCESSOR READING STORAGE MEDIUM USING THE SAME |
| 摘要 |
PURPOSE: A method for forming a silicide within a semiconductor device and a processor reading storage medium using the same are provided to form a silicide layer contacted with a silicon substrate. CONSTITUTION: A silicon substrate is provided into a chamber.(502) An interlayer metal silicide layer is formed on the silicon substrate.(504) A precursor including a metal is provided to form a metal layer on the silicon substrate.(506) A precursor including a silicon is provided to form a metal silicide on the silicon substrate.(508) A proper precursor is provided to form the metal silicide contacted with the silicon substrate.(510) A conductive layer is formed on the interlayer metal silicide layer.(512)
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| 申请公布号 |
KR20010007527(A) |
申请公布日期 |
2001.01.26 |
| 申请号 |
KR20000035262 |
申请日期 |
2000.06.26 |
| 申请人 |
APPLIED MATERIALS INC. |
发明人 |
SRINIBA SRAMANUJAPRAM A.;METSGER BRIAN;WANG SHULIN;WOO FREDERIK C. |
| 分类号 |
H01L21/28;H01L21/24;H01L21/285;H01L21/3205;H01L21/336;H01L21/76;H01L21/768;H01L23/52;H01L29/78;(IPC1-7):H01L21/24 |
主分类号 |
H01L21/28 |
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