TOP COATING COMPOSITION FOR PREVENTING AMINE CONTAMINATION, PHOTORESIST PATTERN FORMING METHOD AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a new top coating composition for preventing amine contamination by adding a compound having the properties of a base or a weak base to a conventional top coating composition for a photoresist. SOLUTION: The top coating composition for preventing amine contamination contains a basic compound in a top coating composition for a photoresist. The compound for preventing amine contamination is basic or low basic and is preferably a water-soluble compound containing a cyclic or acyclic nitrogen- containing compound, e.g. an amine derivative containing an amino acid derivative, an amide derivative, a urea-containing urethane compound or salts of these. The conjugate acid of the basic compound has a pKa value of about <=13, preferably <=11, further preferably <=7. The deformation of a pattern due to the diffusion of an acid in the upper part of PR as well as amine contamination in PED is prevented.