| 摘要 |
<p>PROBLEM TO BE SOLVED: To positively remove foreign substances or the like generated due to dicing or the like, by forming a protective film made of a specified copolymer on the element forming face of a semiconductor wafer, dicing the semiconductor wafer with the protective film to separate into respective semiconductor chips, and removing the protective film remained on the surface of the semiconductor chips. SOLUTION: A protective film is formed on the entire surface of a silicon wafer 1 on which solid-state image pickup elements 2 are formed. This protective film is made of a copolymer of hydrophobic monomer and alkali-solution monomer. Subsequently, the rear surface of the silicon substrate 1 is bonded on an adhesive sheet 4, notches 6 are cut to half of overall thickness in the wafer 1 adhered on the adhesive sheet 4 from over the protective film 3 formed on the surface of the silicon wafer by using dicing saw, and the adhesive sheet 4 is extended to separate the substrate into each solid-state image pickup element 2. Subsequently, each solid-state image pickup element 2 is mounted on a package, and the whole package is immersed in a solvent. Thus, the protective film 3 on the surface of the solid-state image pickup element 2 is dissolved and is removed.</p> |
