| 摘要 |
PROBLEM TO BE SOLVED: To obtain a CVD device of a structure, where deterioration of uniformity of the composition of a film due to the ununiformity of the decomposition of a raw gas on the upstream and downstream sides of the raw gas can be prevented, and to obtain the forming method of the film. SOLUTION: A heating mechanism 77 for holding an Si wafer 75, a first inlet hole 85 for inlet first raw gas for forming a BST(barium strontium titanate) film, an exhaust vent 87 and a second inlet hole 89 for introducing second raw gas having a Ti-content higher than that of the first raw gas are provided in a reaction furnace 73 of a CVD device 71. The first raw gas is fed from a multitude of small holes 91a onto the main surface of the wafer 75 and the flow of the first raw gas to reach from each small hole 91a to the exhaust vent 87 is formed. The second raw gas is introduced from a multitude of small holes 91b into the middle of the flow of the first raw gas. By enhancing Ti- content of the second raw gas higher than that of the first raw gas, the ununiformity of the composition of the BST film in the upstream and downstream sides of the film on the wafer 75 is modified.
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