| 摘要 |
PROBLEM TO BE SOLVED: To form a silicon film, which has little fluctuations in its resistance value with respect to a temperature change and moreover, is small in irregularities in the resistance value within the surface of a semiconductor wafer. SOLUTION: A first impurity ion implantation for doping impurities to a silicon film 8 and a second impurity ion implantation for bringing the upper part of the film 8 into an amorphous state are performed separately from each other at room temperature. Hereby, the controllability of thickness of a polycrystalline silicon film 8b, which contains relatively large crystal grains and is formed in the upper part of the film 8, is improved and moreover, uniformity of the temperature within the surface of a semiconductor wafer at these ion implantations is improved.
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