发明名称 MEASURING METHOD, MEASURING APPARATUS, POLISHING METHOD AND POLISHING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a measuring apparatus which can precisely, simply, and quickly specify measuring pattern species, measure a film thickness and process end points in a film eliminating process and a film forming process, for a substrate having a pattern structure constituted of various pattern species, a substrate in an STI(shallow trench isolation) process and a substrate in a Cu process in which a barrier metal layer exists. SOLUTION: This measuring apparatus is equipped with an optical measurement part which casts a probe light 3 having a plurality of wavelength components on a substrate surface, and obtains a signal wave form of a signal light extracted from a light reflected from the substrate 1 surface or a light which has permeated the surface, and a signal processing part having at least a function which specifies a measurement position 30 on the substrate surface by comparing the signal wave form with a wave form which is previously calculated or measured.
申请公布号 JP2001021317(A) 申请公布日期 2001.01.26
申请号 JP19990189388 申请日期 1999.07.02
申请人 NIKON CORP 发明人 USHIO KAJIRO
分类号 H01L21/304;G01B11/00;G01B11/06;(IPC1-7):G01B11/00 主分类号 H01L21/304
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