| 发明名称 |
MAGNETO-RESISTANCE EFFECT ELEMENT, AND ITS USE AS MEMORY ELEMENT |
| 摘要 |
PURPOSE: A magneto-resistive effect element is provided to effectively perform information reading/writing from/to a magneto-resistive effect memory cell. CONSTITUTION: A magneto-resistive effect element(100) includes a first ferromagnetic film(130), a second ferromagnetic film(110), and a first nonmagnetic film(120) interposed between the first ferromagnetic film(130) and the second ferromagnetic film(110). The first ferromagnetic film(130) has a magnetization more easily rotatable than a magnetization of the second ferromagnetic film(110) by an external magnetic field. The first ferromagnetic film(130) has an effective magnetic thickness of about 2 nm or less. |
| 申请公布号 |
KR20010007428(A) |
申请公布日期 |
2001.01.26 |
| 申请号 |
KR20000033485 |
申请日期 |
2000.06.17 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
ODAGAWA AKIHIRO;HIRAMOTO MASAYOSHI;MATSUKAWA NOZOMU;SAKAKIMA HIROSHI |
| 分类号 |
G11B5/39;G01R33/09;G11C11/14;G11C11/15;G11C11/16;G11C11/56;H01F10/16;H01F10/30;H01F10/32;H01L21/8246;H01L27/105;H01L27/22;H01L43/08;H01L43/10;(IPC1-7):H01L27/10 |
主分类号 |
G11B5/39 |
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