| 发明名称 |
METHOD FOR PRODUCING SILICONIZED POLYSILICON CONTACTS IN INTEGRATED SEMICONDUCTOR STRUCTURES |
| 摘要 |
The resistance of a polysilicon structure is often reduced by providing it with a silicide layer. However this presents a production problem in terms of only siliconizing certain polysilicon layers. Others, such as those that are to be used for resistors, are not siliconised. The invention therefore provides a simple method for the selective siliconization of polysilicon areas in integrated semiconductor structures. |
| 申请公布号 |
WO0106554(A1) |
申请公布日期 |
2001.01.25 |
| 申请号 |
WO2000DE02098 |
申请日期 |
2000.06.28 |
| 申请人 |
INFINEON TECHNOLOGIES AG;BOECK, JOSEF |
发明人 |
BOECK, JOSEF |
| 分类号 |
H01L21/28;H01L21/3205;H01L21/331;H01L21/768;H01L21/822;H01L21/8222;H01L27/04;H01L27/06;H01L29/732 |
主分类号 |
H01L21/28 |
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