DEVICE AND METHOD FOR ETCHING A SUBSTRATE USING AN INDUCTIVELY COUPLED PLASMA

摘要

The invention relates to a method for etching a substrate (10), especially a silicon body, by means of an inductively coupled plasma (14) and to a device for the implementation of said method. To this end, a high-frequency electromagnetic alternating field is generated with an ICP source (13). Said field produces an inductively coupled plasma (14) consisting of reactive particles in a reactor (15). The inductively coupled plasma (14) is produced by the effect of the high-frequency electromagnetic alternating field on a reactive gas. A device, especially a magnetic field coil (21), is also provided which generates a static or temporally variable magnetic field between the substrate (10) and the ICP source (13). The magnetic field is oriented in such a way that the direction thereof is at least by approximation or substantially parallel to the direction defined by the connecting line of the substrate (10) and the inductively coupled plasma (14).