ENHANCED <i>n</i> TYPE SILICON MATERIAL FOR EPITAXIAL WAFER SUBSTRATE AND METHOD OF MAKING SAME
摘要
An enhanced <i>n</i><+> silicon material for epitaxial substrates and a method for producing it are described. The enhanced material leads to improved gettering characteristics of <i>n/n</i><+> epitaxial wafers based on these substrates. The method for preparing such <i>n</i><+> silicon material includes applying a co-doping of carbon to the usual <i>n</i> dopant in the silicon melt, before growing respective CZ crystals. This improves yield of enhanced <i>n</i><+> silicon material in crystal growing and ultimately leads to device yield stabilization of improvement when such <i>n/n</i><+> epitaxial wafers are applied in device manufacturing.
