发明名称 |
Ferroelektrischer Transistor |
摘要 |
The invention relates to a ferroelectric transistor which has two source/drain areas (13) and a channel area between them, in a semiconductor substrate (11), and in which a first dielectric intermediate layer (14) is situated on the surface of the channel area. Above said first dielectric intermediate layer (14) are a ferroelectric layer (15), a second dielectric intermediate layer (16) and a gate electrode (17). The second dielectric intermediate layer (16) reduces the leakage currents through the ferroelectric layer (15) to the interface between the first dielectric layer (14) and the ferroelectric layer, hereby improving the data management.
|
申请公布号 |
DE19931125(A1) |
申请公布日期 |
2001.01.25 |
申请号 |
DE1999131125 |
申请日期 |
1999.07.06 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
HANEDER, THOMAS;BACHHOFER, HARALD;BRAUN, GEORG |
分类号 |
H01L21/28;H01L29/51;H01L29/78;(IPC1-7):H01L29/78;H01L27/105 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|