发明名称 |
Method of manufacturing an EL display device |
摘要 |
To provide an inexpensive EL display device of high definition. An anode, a light emitting layer, and a cathode are formed on a substrate, and selective doping using at least one selected from the group consisting of an alkali metal element, an alkaline earth metal element and a halogen element is then performed to form at least ones of electron transmitting regions and hole transmitting regions. In such a structure, only a part of the light emitting layer, where at least ones of the electron transmitting regions and the hole transmitting regions are formed, emits light when a given voltage is applied to the light emitting layer, whereby images are displayed as desired. <IMAGE> |
申请公布号 |
EP1071145(A2) |
申请公布日期 |
2001.01.24 |
申请号 |
EP20000115503 |
申请日期 |
2000.07.18 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI;TSUTSUI, TETSUO;MIZUKAMI, MAYUMI |
分类号 |
H01L27/32;H05B33/10;H01L51/50;H01L51/52;H01L51/56;H05B33/14;H05B33/22;H05B33/26 |
主分类号 |
H01L27/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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