| 发明名称 |
Process for preparing a semiconductor device including the selective deposition of a metal |
| 摘要 |
<p>A process for preparing a semiconductor device comprises the step of surface modifying a desired portion of the surface of a substrate and the step of depositing selectively a metal on an electron-donative surface provided corresponding to the portion. <IMAGE></p> |
| 申请公布号 |
EP0466320(B1) |
申请公布日期 |
2001.01.24 |
| 申请号 |
EP19910305021 |
申请日期 |
1991.06.03 |
| 申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
SATO, YASUE |
| 分类号 |
C23C16/02;C23C16/34;C23C16/40;H01L21/28;H01L21/285;H01L21/311;H01L21/316;H01L21/318;H01L21/3205;H01L31/20;(IPC1-7):H01L21/285 |
主分类号 |
C23C16/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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