发明名称 Element exploiting magnetic material and addressing method therefor
摘要 An element that is able to control magnetization without applying a magnetic field from outside. A magnetized area formed of a ferromagnetic material is split by a spacer area of a composite material including a magnetic material and a semiconductor material. A stimulus is applied from outside to the spacer area to change the magnetic interaction between split magnetized areas to control the magnetization of the magnetized areas. Alternatively, a layered assembly made up of an electrically conductive layer containing an electrically conductive material and plural magnetic layers is provided so that the electrically conductive layer is arranged between the magnetic layers. The current is caused to flow through the electrically conductive layer to change the magnetic coupling state between the magnetic layers to control the direction of magnetization between the magnetic layers.
申请公布号 US6178112(B1) 申请公布日期 2001.01.23
申请号 US19990248907 申请日期 1999.02.12
申请人 SONY CORPORATION 发明人 BESSHO KAZUHIRO;IWASAKI YOH
分类号 G11C11/22;G11C11/56;H01L29/66;H01L43/08;(IPC1-7):G11C11/15 主分类号 G11C11/22
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