发明名称 Semiconductor integrated circuit device
摘要 A semiconductor integrated circuit device includes a semiconductor substrate, a MOS transistor formed on the semiconductor substrate and having a first gate, wherein a first signal supplied to the first gate and a second signal supplied to a substrate region corresponding to the semiconductor substrate are combined with each other so that one logical signal is transmitted.
申请公布号 US6177811(B1) 申请公布日期 2001.01.23
申请号 US19990348623 申请日期 1999.07.06
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 FUSE TSUNEAKI;OOWAKI YUKIHITO;SHUTO YOKO
分类号 H01L27/12;H03K19/0944;H03K19/0948;H03K19/21;(IPC1-7):H03K19/094 主分类号 H01L27/12
代理机构 代理人
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