发明名称 |
Semiconductor integrated circuit device |
摘要 |
A semiconductor integrated circuit device includes a semiconductor substrate, a MOS transistor formed on the semiconductor substrate and having a first gate, wherein a first signal supplied to the first gate and a second signal supplied to a substrate region corresponding to the semiconductor substrate are combined with each other so that one logical signal is transmitted.
|
申请公布号 |
US6177811(B1) |
申请公布日期 |
2001.01.23 |
申请号 |
US19990348623 |
申请日期 |
1999.07.06 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
FUSE TSUNEAKI;OOWAKI YUKIHITO;SHUTO YOKO |
分类号 |
H01L27/12;H03K19/0944;H03K19/0948;H03K19/21;(IPC1-7):H03K19/094 |
主分类号 |
H01L27/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|