| 摘要 |
A method of manufacturing enveloped semiconductor devices, in which use is made of a slice of a semiconductor material which is provided on its first side with an intermediate layer of an insulating material on which a top layer of a semiconductor material is formed, semiconductor elements are formed in the top layer, paths of the slice's surface situated on this side being left clear between the semiconductor elements, and the top layer is removed from the insulating intermediate layer at the location of the free paths. A metallization with connection electrodes extending as far as the free paths are formed on the first side of the slice, the slice is glued with its first side onto a transparent insulating supporting body, semiconductor material is removed from the second side of the slice facing away from the first side, and the slice thus reduced in thickness is provided on its second side with a layer of an insulating material. Grooves are formed in the supporting body, at the location of the free paths, which grooves intersect the connection electrodes of the metallization and extend into the layer of insulating material provided on the second side of the slice, conductor tracks are formed on the supporting body, which extend in the grooves so as to make contact with the connection electrodes intersected in the grooves, and the slice is divided, along the grooves, into separate semiconductor devices enveloped by the supporting body and the insulating layer provided on the second side.
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