发明名称 |
Positive photoresist composition and process for forming contact hole |
摘要 |
A positive photoresist composition for forming a contact hole which comprises (A) an alkali-soluble resin; (B) a naphthoquinonediazide group-containing compound; and (C) a solvent, wherein the ingredient (B) comprises: at least one naphthoquinonediazidesulfonic ester of a polyphenol compound, where said polyphenol compound is composed of from 4 to 6 benzene rings each bonding via a methylene chain, each of the methylene chains is in a meta position to other methylene chains, and each of the benzene rings has a hydroxyl group is provided. According to the present invention, a positive photoresist composition and a process for forming a contact hole can be provided each of which gives a contact hole pattern image in exact accordance with a mask pattern without dimple formation, in the contact hole forming technologies using the phaseshift method.
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申请公布号 |
US6177226(B1) |
申请公布日期 |
2001.01.23 |
申请号 |
US19980069074 |
申请日期 |
1998.04.29 |
申请人 |
TOKYO OHKA KOGYO CO., LTD. |
发明人 |
KURIHARA MASAKI;NIIKURA SATOSHI;KOBAYASHI MIKI;DOI KOUSUKE;KOHARA HIDEKATSU;NAKAYAMA TOSHIMASA |
分类号 |
G03F7/022;(IPC1-7):G03F7/023 |
主分类号 |
G03F7/022 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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