发明名称 PHYSICAL VAPOR DEPOSITION METHOD
摘要 PROBLEM TO BE SOLVED: To physically remove or move depositions disturbing vapor deposition by spraying inert gas or reaction gas used for vapor deposition treatment on the surface of a work. SOLUTION: In a closed inside space of a vacuum chamber (a) in a cathode arc ion plating device, a substrate is applied with coating. The substrate is fitted with a work such as a tool, a die and machine parts. The inside space of the chamber (a) is suitably evacuated by a vacuum pump (b). Reaction gas or inert gas (c) is inserted to the inside of the chamber (a) in each stage of the vapor deposition. Vapor depositing sources (d) are fitted by plural pieces for uniformly executing the coating. Moreover, the substrate is arranged roratably for uniformly executing the coating. A target forms an arc on the space between it and the substrate to form an anode, and in a plasma state, a target material is fed. Spraying gas (f) is the one for removing depositions deposited on the surface of the work, and a spraying tube (g) is provided. In this way, the defects of the film can be reduced.
申请公布号 JP2001020057(A) 申请公布日期 2001.01.23
申请号 JP19990192677 申请日期 1999.07.07
申请人 NIPPON COATING CENTER KK 发明人 DOMAE TATSUO
分类号 B23B27/14;B21D37/20;C23C14/02;C23C14/06;C23C14/32;(IPC1-7):C23C14/02 主分类号 B23B27/14
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