Conductive diffusion barrier layer, semiconductor device having the same, and manufacturing thereof

摘要

A conductive diffusion barrier layer, a semiconductor device having the same, and a method for manufacturing the semiconductor device is provided. The diffusion barrier layer contains Al, N, and a metal element selected from the group consisting of Ta, Mo, Nb, and W. The content ratio of each element is between 1 and 60 mole percent. The diffusion barrier layer further contains O having a content ratio between 1 and 50 mole percent. A capacitor using the diffusion barrier layer described above exhibits a higher capacitance because the plug formed under a storage node is prevented from being oxidized and a dielectric layer having a high dielectric constant is formed.